WSi2/polysilicon gate etching using tin hard mask in conjunction with photoresist

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2508-2513

  Tabara, Suguru ^a  

^a YAMAHA CORPORATION   (Japan)

Author keywords

Charging damage; Cl2 O2 plasma; Electron shading; Hard mask; High density plasma; Plasma etching; TiN; TiO2

Indexed keywords

ELECTRON SHADING;

ASPECT RATIO; EROSION; ION BOMBARDMENT; MASKS; PHOTORESISTS; PLASMA DENSITY; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TITANIUM NITRIDE;

GATES (TRANSISTOR);

EID: 0031125933     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2508     Document Type: Article

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