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Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 1, 2006, Pages 13-19

Electrical properties of nanocrystalline silicon

a NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

Electrical transport; Nanocrystalline silicon; Quantum confinement

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; NANOCOMPOSITE FILMS; NANOCRYSTALS; POROUS SILICON; QUANTUM CHEMISTRY; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON OXIDES; TEMPERATURE DISTRIBUTION;

CONDUCTION MECHANISM; ELECTRICAL TRANSPORT; EXPERIMENTAL INVESTIGATIONS; NANOCRYSTALLINE POROUS SILICON (NC-PS); NANOCRYSTALLINE SILICON FILMS; POTENTIAL BARRIERS; TEMPERATURE CHARACTERISTIC; TEMPERATURE DEPENDENCE;

NANOCRYSTALLINE SILICON;

EID: 33646053829 PISSN: 14544164 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (10)

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