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Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 124-130

Nanoscale structural investigation of Si crystallites grown from silicon suboxide films by thermal annealing

(3) Wakayama, Yutaka a Inokuma, Takao b Hasegawa, Seiichi b

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b KANAZAWA UNIVERSITY (Japan)

Author keywords

Crystallization; tEM observation; Si crystallite; Silicon suboxide

Indexed keywords

AMORPHOUS FILMS; ANISOTROPY; ANNEALING; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTALLIZATION; OXIDES; PRECIPITATION (CHEMICAL); SILICON; STACKING FAULTS; TWINNING;

SILICON SUBOXIDE; SURFACE FACETTING;

NANOSTRUCTURED MATERIALS;

EID: 0031648552 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00408-9 Document Type: Article

Times cited : (20)

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