Electrical behaviour of fresh and stored porous silicon films

Thin Solid Films

Volumn 325, Issue 1-2, 1998, Pages 271-277

  Ciurea, M L ^a   Baltog, I ^a   Lazar, M ^a   Iancu, V ^b   Lazanu, S ^a   Pentia, E ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Electrical properties and measurements; Quantum effects; Silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; OXIDATION; PHOTOLUMINESCENCE; QUANTUM THEORY; THERMAL EFFECTS;

THERMALLY STIMULATED DEPOLARIZATION CURRENTS;

POROUS SILICON;

EID: 0032119733     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00429-5     Document Type: Article

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