Microstructural aspects related to carriers transport properties of nanocrystalline porous silicon films

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3516-3521

  Ciurea, M L ^a   Iancu, V ^b   Teodorescu, V S ^a   Nistor, L C ^a   Blanchin, M G ^c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DIFFRACTION; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS; POROSITY; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DARK CURRENTS; QUANTUM CONFINEMENT MODEL; SELECTED AREA ELECTRON DIFFRACTION (SAED) ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0033364164     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392507     Document Type: Article

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