Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films

Solid-State Electronics

Volumn 42, Issue 10, 1998, Pages 1893-1896

  Iancu, V ^a   Ciurea, M L ^b  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; OXIDATION; POROUS SILICON; THERMAL EFFECTS;

DARK CURRENTS; QUANTUM CONFINEMENT MODEL;

OPTICAL FILMS;

EID: 0032182480     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00160-9     Document Type: Article

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