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Volumn 76, Issue 21, 2000, Pages 3067-3069

Trapping levels in nanocrystalline porous silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001344606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126581     Document Type: Article
Times cited : (26)

References (15)
  • 14
    • 0000227182 scopus 로고    scopus 로고
    • Properties of Porous Silicon
    • edited by L. T. Canham, INSPEC, London
    • L. T. Canham, Properties of Porous Silicon, edited by L. T. Canham, EMIS Datareviews Series No. 18 (INSPEC, London, 1997), p. 336.
    • (1997) EMIS Datareviews Series No. 18 , vol.18 , pp. 336
    • Canham, L.T.1
  • 15
    • 0000227182 scopus 로고    scopus 로고
    • Properties of Porous Silicon
    • edited by L. T. Canham, INSPEC, London
    • C. Delerue, M. Lannoo, and G. Allan, Properties of Porous Silicon, edited by L. T. Canham, EMIS Datareviews Series No. 18 (INSPEC, London, 1997), p. 212.
    • (1997) EMIS Datareviews Series No. 18 , vol.18 , pp. 212
    • Delerue, C.1    Lannoo, M.2    Allan, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.