Opposite effects of NO2 on electrical injection in porous silicon gas sensors

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4388-4390

  Gaburro, Zeno ^a   Oton, Claudio J ^a   Pavesi, Lorenzo ^a   Pancheri, Lucio ^a  

^a UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ETCHING; EVAPORATION; HYGROMETERS; INTERFACES (MATERIALS); NITROGEN COMPOUNDS; PARAMETER ESTIMATION; SAMPLING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SILICON SENSORS; SINGLE CRYSTALS;

BIAS VOLTAGES; ELECTRICAL INJECTION; ETCHING TIME; INJECTION VARIATIONS;

POROUS SILICON;

EID: 3042782484     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1757025     Document Type: Article

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