On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 8-11, 2006, Pages

  Arulkumaran, Subramaniam ^a,b   Egawa, Takashi ^b   Selvaraj, Lawrence ^a   Ishikawa, Hiroyasu ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

AlGaN GaN HEMTs, GaN cap layer; Drain current collapse; Gate recess; Leakage current; Trapping effect

Indexed keywords

CURRENT DENSITY; ELECTRON MOBILITY; ELECTRON TRAPS; ETCHING; LEAKAGE CURRENTS; PLASMA ETCHING;

CAP LAYER; DOPANT; DRAIN CURRENT COLLAPSE; GATE-RECESS ETCHING; HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS); TRAPPING EFFECT; WHITE LIGHT;

TRANSISTORS;

EID: 33645990028     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L220     Document Type: Article

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