Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Electronics Letters

Volumn 39, Issue 19, 2003, Pages 1419-1420

  Coffie, R ^a   Shen, L ^a   Parish, G ^b   Chini, A ^a   Buttari, D ^a   Heikman, S ^a   Keller, S ^a   Mishra, U K ^a  

^a University of California   (United States)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

DEVICE FABRICATION; GATE RECESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0141973747     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030872     Document Type: Article

References (7)

1. Mishra, U.K., Parikh, P., and Wu, Y.F.: 'AlGaN/GaN HEMTs-an overview of device operation and applications', Proc. IEEE, 2002, 90, (6), pp. 1022-1031
2. Shealy, J.R., et al.: 'An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer', J. Phys.: Condens. Matter, 2002, 14, (13), pp. 3499-3509
3. Green, B.M., et al.:'The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs', IEEE Electron Device Lett., 2000, 21, (6), pp. 268-270
4. Binari, S.C., et al.: 'Trapping effects and microwave power performance in AlGaN/GaN HEMTs', IEEE Trans. Electron Devices, 2001, 48, (3), pp. 465-471
5. Jiménez, A., et al.: 'Effect of p-doped overlayer thickness on RF-dispersion in GaN junction field effect transistors', IEEE Electron Device Lett., 2002, 23, (6), pp. 306-308
6. Coffie, R., et al.: 'p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)', IEEE Electron Device Lett., 2002, 23, (10), pp. 588-590
7. + ledge channel structure for GaAs power FET's', IEEE Trans. Electron Devices, 1986, 33, (11), pp. 1818-1824