Conducting-AFM studies on local dielectric breakdown of ultrathin SiO2 films

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 124-126

  Ando, A ^a   Miki, K ^a   Sakamoto, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CONDUCTIVE FILMS; DEGRADATION; DIELECTRIC DEVICES; FILMS; METALS; MOS CAPACITORS; MOS DEVICES; RECONFIGURABLE HARDWARE; SEMICONDUCTOR DEVICES; ULTRATHIN FILMS;

DEGRADATION MECHANISM; DIELECTRIC DEGRADATION; GATE OXIDE FILMS; METAL OXIDE SEMICONDUCTOR; MICROSCOPIC CHARACTERIZATION; MICROSCOPIC STUDY; NANO-METER SCALE; SPATIAL RESOLUTION;

OXIDE FILMS;

EID: 84858571060     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967561     Document Type: Conference Paper

References (9)

1. 2 Films", Appl. Surf. Sci., vol. 162-163, pp. 401-405, 2000.
2. 2 Films", IEEE Trans. Electron Devices, vol. ED-35, pp. 2259-2267, 1988.
3. K. Okada and K. Taniguchi, "Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides", Appl. Phys. Lett., vol. 70, pp351-353, 1997.
4. T. Sakura, H. Utsunomiya, K. Kamakura and K. Taniguchi, "A detailed study of soft- and pre-soft-breakdowns in small geometry MOS structures", in IEDM Tech. Dig., 1998, p. 183-186.
5. S. J. O'Shea, R. M. Atta, M. P. Murrell, M. E. Welland, "Conducting atomic force microscopy study of silicon dioxide breakdown", J. Vac. Sci. Technol. B, vol. 13, pp. 1945-1952, 1995.
6. 2 films", Appl. Phys. A, vol. 72, pp. S223-S226, 2001.
7. 2 films using conducting atomic force microscopy", Appl. Phys. Lett., vol. 78, pp.4181-4183, 2001.
8. 2 films using scanning tunneling microscopy and spectroscopy", J. Appl. Phys., vol. 85, pp.6704-6710, 1999.
9. 2 layers", Appl. Phys. Lett., vol. 73, pp.490-492, 1998.