Dielectric characterization of metal-oxide-semiconductor capacitor using Ga2O3 dielectrics on p-Si (100)

Integrated Ferroelectrics

Volumn 74, Issue , 2005, Pages 173-180

  Lee, Sang A ^a   Jeong, Se Young ^a   Hwang, Jae Yeol ^b   Kim, Jong Pil ^b   Ha, Myong Gyu ^b   Cho, Chae Ryong ^a,b  

^a Pusan National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

ARXPS; Dielectric; Ga2O3 thin film; Metal oxide semiconductor structure

Indexed keywords

DIELECTRIC MATERIALS; GALLIUM COMPOUNDS; MAGNETRON SPUTTERING; MOS DEVICES; SEMICONDUCTOR DEVICES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARXPS; CAPACITANCE-VOLTAGE MEASUREMENTS; METAL-OXIDE-SEMICONDUCTOR STRUCTURE;

CAPACITORS;

EID: 33645509167     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580500414192     Document Type: Conference Paper

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