Work-function difference between AL and n-GaN from Al-gated n-GaN/nitrided-thin-Ga 2O 3/SiO 2 metal oxide semiconductor structures

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5413-5415

  Bae, Choelhwyi ^a   Krug, Cristiano ^a   Lucovsky, Gerald ^a   Chakraborty, Arpan ^b   Mishra, Umesh ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; INTERFACE DIPOLE; PHOTOEMISSION SPECTROSCOPY (PS); POSTDEPOSITION;

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRONS; FERMI LEVEL; GALLIUM NITRIDE; GATES (TRANSISTOR); HYSTERESIS; INDUCTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICA; ULTRATHIN FILMS;

MOS CAPACITORS;

EID: 3242732332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767599     Document Type: Article

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