Electrical properties of a silicon nanocrystal embedded in a thin oxide layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 B, 2006, Pages 2386-2389

  Son, Jeong Min ^a   Lee, Euy Kyu ^a   Kim, Jung Min ^a   Khang, Yoonho ^b   Park, Ji Yong ^c   Choi, Young Jin ^a   Kim, Yong Sang ^a   Kang, Chi Jung ^a  

^a Myong Ji University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Ajou University   (South Korea)

Author keywords

Electrostatic force microscopy; Localized electrical properties; Scanning capacitance microscopy; Si nanocrystal

Indexed keywords

EMBEDDED SYSTEMS; IMAGE PROCESSING; OXIDATION; OXIDES; SILICON; THIN FILMS;

ELECTROSTATIC FORCE MICROSCOPY; LOCALIZED ELECTRICAL PROPERTIES; SCANNING CAPACITANCE MICROSCOPY; SI NANOCRYSTAL;

NANOSTRUCTURED MATERIALS;

EID: 33645498391     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2386     Document Type: Article

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