Growth/dissolution model for oxygen precipitation based on the kinetics of phase transformations

Journal of Applied Physics

Volumn 85, Issue 4, 1999, Pages 2100-2107

  Ko, Bong Gyun ^a   Kwack, Kae Dal ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347176360     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369509     Document Type: Article

References (36)

1. K. Sumino, H. Harada, and I. Yonegawa, Jpn. J. Appl. Phys., Part 2 19, L49 (1980).
2. T. Y. Tan and W. K. Tice, Philos. Mag. 34, 615 (1976).
3. M. Vollmer and A. Weber, Z. Phys. Chem. 119, 277 (1926).
4. R. Becker and W. Döring, Ann. Phys. (Leipzig) 24, 719 (1935).
5. K. Wada and N. Inoue, J. Cryst. Growth 71, III (1985).
6. F. S. Ham, J. Phys. Chem. Solids 6, 335 (1958).
7. K. Yang, J. Carle, and R. Kleinhenz, J. Appl. Phys. 62, 4890 (1987).
8. S. Isomae, J. Appl. Phys. 70, 4217 (1991).
9. M. Schrems, in Oxygen in Silicon, Semiconductors and Semimetals, edited by F. Shimura (Academic, New York, 1994), Vol. 42.
10. S. Senkader, J. Esfandyari, and G. Hobler, J. Appl. Phys. 78, 6469 (1995).
11. D. A. Porter and K. E. Easterling. Phase Transformation in Metals and Alloys, 2nd ed. (Chapman & Hall, London, 1992), Chap. 1.
12. D. Turnhull and J. C. Fischer, J. Chem. Phys. 17, 71 (1949).
13. C. Kittel and H. Kroemer, Thermal Physics, 2nd ed. (W. H. Freeman and Company, New York, 1980), p. 407.
14. T. R. Waite, Phys. Rev. 107, 463 (1957).
15. S. M. Hu, Mater. Res. Soc. Symp. Proc. 59, 249 (1986).
16. J. C. Mikkelsen, Jr., Appl. Phys. Lett. 41, 871 (1992).
17. S. T. Dunham, J. Appl. Phys. 71, 685 (1992).
18. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
19. G. Schafetter and H. K. Gummel. IEEE Trans. Electron Devices ED-16, 64 (1969).
20. J. C. Mikkelsen, Jr., Mater. Res. Soc. Symp. Proc. 59. 19 (1986).
21. H. Zimmerman and H. Ryssel. Appl. Phys. A: Solids Surf. 55, 121 (1992).
22. K. Yusutake, M. Umeno, and H. Kawabe, Phys. Status Solidi B 83, 207 (1984).
23. TMA TSUPREM-4 User's Manual, version 6.0. Technology Modeling Associates, Palo Alto, CA, Dec. 1993.
24. M. Dammann and H. Baltes, J. Appl. Phys. 76, 4547 (1994).
25. A. Virzi and M. Porrini, Mater. Sci. Eng., B 17, 196 (1993).
26. S. Messoloras, R. C. Newman, R. J. Stewart, and J. H. Turker, Semicond. Sci. Technol. 2, 14 (1987).
27. H. D. Chiou, Solid State Technol. 30, 77 (1987).
28. S. Isomae, S. Aoki, and K. Watanabe, J. Appl. Phys. 55, 817 (1984).
29. J. Esfandyari et al. J. Electrochem. Soc. 143, 995 (1996).
30. K. Hölzlein, G. Pensl, and M. Schulz, Appl. Phys. A: Solids Surf. A34, 155 (1984).
31. A. W. Adamson. Physical Chemistry of Surfaces, 3rd ed. (Wiley, New York, 1976), pp. 216-218, pp. 553-561.
32. M. Hu, Appl. Phys. Lett. 36, 561 (1980).
33. H. Abe. I. Suzuki, and H. Koya, J. Electrochem. Soc. 144, 306 (1997).
34. M. Schrems et al., Semiconductor Silicon (The Electrochemical Society, New York, 1990), p. 144.
35. E. M. Lifshits and L. P. Pitaevskii, Physical Kinetics (Pergamon, Oxford, 1981).
36. F. C. Goodrich, Proc. R. Soc. London, Ser. A 277, 167 (1964).