Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 473-476

  Zolnai, Z ^a,b   Son, N T ^a   Magnusson, B ^a   Hallin, C ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Antisite; Electron irradiation; Electron paramagnetic resonance; Intrinsic defects; Thermal annealing; Vacancy

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); DEFECTS; ELECTRON IRRADIATION; PARAMAGNETIC RESONANCE; SUBSTRATES; TEMPERATURE MEASUREMENT;

ANTISITE; INTRINSIC DEFECTS; THERMAL ANNEALING; VACANCY;

SILICON CARBIDE;

EID: 8744244276     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (9)

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