Effect of interfacial SiO2 thickness for low temperature O 2 plasma activated wafer bonding

Microsystem Technologies

Volumn 12, Issue 5, 2006, Pages 383-390

  Olbrechts, Benoit ^a   Zhang, Xuanxiong ^a   Bertholet, Yannick ^a   Pardoen, Thomas ^a   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

Low temperature; O2 plasma; Oxide thickness; Wafer bonding

Indexed keywords

BONDING; PLASMA THEORY; SILICA; THICKNESS MEASUREMENT;

2 PLASMA; LOW TEMPERATURE; WAFER BONDING;

SILICON WAFERS;

EID: 33645162729     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-005-0038-2     Document Type: Conference Paper

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