Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding

Sensors and Actuators, A: Physical

Volumn 82, Issue 1, 2000, Pages 239-244

  Pasquariello, Donato ^a   Lindeberg, Mikael ^a   Hedlund, Christer ^a   Hjort, Klas ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; ELECTRIC POTENTIAL; INTERFACIAL ENERGY; PLASMA APPLICATIONS; SURFACE ROUGHNESS;

PLASMA ACTIVATION; WAFER BONDING;

SILICON WAFERS;

EID: 0033741540     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00338-6     Document Type: Article

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