The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 906-910

  Dessein, K ^a,b   Anil Kumar, P S ^c   Nemeth S ^a,d   Delaey, L ^b   Borghs, G ^a   De Boeck, J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Nederlands Centrum voor Laser   (Netherlands)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

A1. Wafer bonding; A3. Molecular beam epitaxy; B3. Spin valve transistor

Indexed keywords

BONDING; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; TRANSISTORS; VACUUM TECHNOLOGY;

SPIN-VALVE TRANSISTORS; WAFER BONDING;

HETEROJUNCTIONS;

EID: 0035399412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00926-5     Document Type: Conference Paper

References (14)