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Volumn 110, Issue 1-3, 2004, Pages 401-406

Low temperature wafer bonding for thin silicon film transfer

Author keywords

Bond strength; Low temperature bonding; Plasma activation; Silicon wafer bonding; Silicon on insulator (SOI)

Indexed keywords

LOW TEMPERATURE BONDING; PLASMA ACTIVATION;

EID: 1642525630     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.09.011     Document Type: Conference Paper
Times cited : (21)

References (13)
  • 1
    • 0035425913 scopus 로고    scopus 로고
    • Low temperature full wafer adhesive bonding of structured wafers
    • Niklaus F., Anderson H., Enoksson P., Stemme G. Low temperature full wafer adhesive bonding of structured wafers. Sens. Actuators A. 92:2001;235-241.
    • (2001) Sens. Actuators A , vol.92 , pp. 235-241
    • Niklaus, F.1    Anderson, H.2    Enoksson, P.3    Stemme, G.4
  • 3
    • 0032136370 scopus 로고    scopus 로고
    • Wafer-to-wafer bonding for microstructure formation
    • Schmidt M.A. Wafer-to-wafer bonding for microstructure formation. Proc. IEEE. 86(8):1998;1575-1585.
    • (1998) Proc. IEEE , vol.86 , Issue.8 , pp. 1575-1585
    • Schmidt, M.A.1
  • 4
    • 0000372949 scopus 로고    scopus 로고
    • Mechanical induced Si layer transfer in hydrogen-implanted Si wafers
    • Henttinen K., Suni I., Kau S.S. Mechanical induced Si layer transfer in hydrogen-implanted Si wafers. Appl. Phys. Lett. 76:2000;2370.
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 2370
    • Henttinen, K.1    Suni, I.2    Kau, S.S.3
  • 5
    • 0035424537 scopus 로고    scopus 로고
    • Plasma assisted room temperature bonding for MST
    • Weinert A., Amirfeiz P., Bengtsson S. Plasma assisted room temperature bonding for MST. Sens. Actuators A. 92:2001;214-222.
    • (2001) Sens. Actuators A , vol.92 , pp. 214-222
    • Weinert, A.1    Amirfeiz, P.2    Bengtsson, S.3
  • 6
    • 0034224590 scopus 로고    scopus 로고
    • The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
    • Wu Y.H., Huang C.H., Chen W.J., Lin C.N., Chin A. The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding. J. Electrochem. Soc. 147(7):2000;2754-2756.
    • (2000) J. Electrochem. Soc. , vol.147 , Issue.7 , pp. 2754-2756
    • Wu, Y.H.1    Huang, C.H.2    Chen, W.J.3    Lin, C.N.4    Chin, A.5
  • 7
    • 0034224095 scopus 로고    scopus 로고
    • Oxidation and induced damage in oxygen plasma in situ wafer bonding
    • Pasquariello D., Hedlund C., Hjort K. Oxidation and induced damage in oxygen plasma in situ wafer bonding. J. Electrochem. Soc. 147(7):2000;2699-2703.
    • (2000) J. Electrochem. Soc. , vol.147 , Issue.7 , pp. 2699-2703
    • Pasquariello, D.1    Hedlund, C.2    Hjort, K.3
  • 10
    • 18844478519 scopus 로고    scopus 로고
    • Study of low-temperature direct bonding of (1 1 1) and (1 0 0) silicon wafers under various ambient and surface conditions
    • Resnik D., Vracnik D., Aljancic U., Amon S. Study of low-temperature direct bonding of (1. 1 1) and (1 0 0) silicon wafers under various ambient and surface conditions Sens. Actuators. 80:2000;68-76.
    • (2000) Sens. Actuators , vol.80 , pp. 68-76
    • Resnik, D.1    Vracnik, D.2    Aljancic, U.3    Amon, S.4
  • 12
    • 0342758713 scopus 로고    scopus 로고
    • Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding
    • Goustouridis D., Tsoukalas D., Normand P., Kontos A.G., Raptis Y., Anastassakis E. Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding. Sens. Actuators A. 76:1999;403-408.
    • (1999) Sens. Actuators A , vol.76 , pp. 403-408
    • Goustouridis, D.1    Tsoukalas, D.2    Normand, P.3    Kontos, A.G.4    Raptis, Y.5    Anastassakis, E.6
  • 13
    • 0036643750 scopus 로고    scopus 로고
    • Fabrication of single crystal Si cantilevers using a dry release process and their application as a capacitive type humidity sensor
    • Chatzandroulis S., Tserepi A., Goustouridis D., Normand P., Tsoukalas D. Fabrication of single crystal Si cantilevers using a dry release process and their application as a capacitive type humidity sensor. Microelectron. Eng. 61-62:2002;955-961.
    • (2002) Microelectron. Eng. , vol.61-62 , pp. 955-961
    • Chatzandroulis, S.1    Tserepi, A.2    Goustouridis, D.3    Normand, P.4    Tsoukalas, D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.