-
2
-
-
0035605842
-
Low-temperature wafer-level transfer bonding
-
Niklaus F., Enoksson P., Griss P., Kalvesten E., Stemme G. Low-temperature wafer-level transfer bonding. J. Microelectromech. Syst. 10(4):2000;525-531.
-
(2000)
J. Microelectromech. Syst.
, vol.10
, Issue.4
, pp. 525-531
-
-
Niklaus, F.1
Enoksson, P.2
Griss, P.3
Kalvesten, E.4
Stemme, G.5
-
3
-
-
0032136370
-
Wafer-to-wafer bonding for microstructure formation
-
Schmidt M.A. Wafer-to-wafer bonding for microstructure formation. Proc. IEEE. 86(8):1998;1575-1585.
-
(1998)
Proc. IEEE
, vol.86
, Issue.8
, pp. 1575-1585
-
-
Schmidt, M.A.1
-
4
-
-
0000372949
-
Mechanical induced Si layer transfer in hydrogen-implanted Si wafers
-
Henttinen K., Suni I., Kau S.S. Mechanical induced Si layer transfer in hydrogen-implanted Si wafers. Appl. Phys. Lett. 76:2000;2370.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2370
-
-
Henttinen, K.1
Suni, I.2
Kau, S.S.3
-
6
-
-
0034224590
-
The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding
-
Wu Y.H., Huang C.H., Chen W.J., Lin C.N., Chin A. The buried oxide properties in oxygen plasma-enhanced low-temperature wafer bonding. J. Electrochem. Soc. 147(7):2000;2754-2756.
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.7
, pp. 2754-2756
-
-
Wu, Y.H.1
Huang, C.H.2
Chen, W.J.3
Lin, C.N.4
Chin, A.5
-
7
-
-
0034224095
-
Oxidation and induced damage in oxygen plasma in situ wafer bonding
-
Pasquariello D., Hedlund C., Hjort K. Oxidation and induced damage in oxygen plasma in situ wafer bonding. J. Electrochem. Soc. 147(7):2000;2699-2703.
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.7
, pp. 2699-2703
-
-
Pasquariello, D.1
Hedlund, C.2
Hjort, K.3
-
9
-
-
33644949327
-
Bonding of silicon wafers for silicon-on-insulator
-
Maszara W.P., Goetz G., Caviglia A., McKitterick J.B. Bonding of silicon wafers for silicon-on-insulator. J. Appl. Phys. 64(10):1988;4943-4950.
-
(1988)
J. Appl. Phys.
, vol.64
, Issue.10
, pp. 4943-4950
-
-
Maszara, W.P.1
Goetz, G.2
Caviglia, A.3
McKitterick, J.B.4
-
10
-
-
18844478519
-
Study of low-temperature direct bonding of (1 1 1) and (1 0 0) silicon wafers under various ambient and surface conditions
-
Resnik D., Vracnik D., Aljancic U., Amon S. Study of low-temperature direct bonding of (1. 1 1) and (1 0 0) silicon wafers under various ambient and surface conditions Sens. Actuators. 80:2000;68-76.
-
(2000)
Sens. Actuators
, vol.80
, pp. 68-76
-
-
Resnik, D.1
Vracnik, D.2
Aljancic, U.3
Amon, S.4
-
12
-
-
0342758713
-
Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding
-
Goustouridis D., Tsoukalas D., Normand P., Kontos A.G., Raptis Y., Anastassakis E. Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding. Sens. Actuators A. 76:1999;403-408.
-
(1999)
Sens. Actuators A
, vol.76
, pp. 403-408
-
-
Goustouridis, D.1
Tsoukalas, D.2
Normand, P.3
Kontos, A.G.4
Raptis, Y.5
Anastassakis, E.6
-
13
-
-
0036643750
-
Fabrication of single crystal Si cantilevers using a dry release process and their application as a capacitive type humidity sensor
-
Chatzandroulis S., Tserepi A., Goustouridis D., Normand P., Tsoukalas D. Fabrication of single crystal Si cantilevers using a dry release process and their application as a capacitive type humidity sensor. Microelectron. Eng. 61-62:2002;955-961.
-
(2002)
Microelectron. Eng.
, vol.61-62
, pp. 955-961
-
-
Chatzandroulis, S.1
Tserepi, A.2
Goustouridis, D.3
Normand, P.4
Tsoukalas, D.5
|