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Volumn 16, Issue 6, 2006, Pages 563-569
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High-permittivity YScO3 thin films by atomic layer deposition using two precursor approaches
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPOSITION;
DIELECTRIC PROPERTIES;
ORGANOMETALLICS;
OZONE;
STOICHIOMETRY;
AMORPHOUS YSCO3 THIN FILMS;
ATOMIC LAYER DEPOSITION;
FILM THICKNESS;
STOICHIOMETRIC FILMS;
THIN FILMS;
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EID: 33644656212
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/b514083h Document Type: Article |
Times cited : (33)
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References (39)
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