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Volumn 600, Issue 5, 2006, Pages 1165-1169

Reaction of cyanide ions with copper on Si surfaces and its use for Si cleaning

Author keywords

Cleaning; Copper; Defect passivation; Potassium cyanide; Silicon

Indexed keywords

COPPER; IMPURITIES; METHANOL; PASSIVATION; POTASSIUM COMPOUNDS; SILICA; SILICON; SOLUTIONS; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 33644603666     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.017     Document Type: Article
Times cited : (7)

References (29)
  • 21
    • 85111790871 scopus 로고    scopus 로고
    • Cleaning technology in semiconductor device manufacturing IX
    • J. Ruzyllo, T. Hattori, R.E. Novak
    • M. Takahashi, Y.-L. Liu, H. Narita, H. Kobayashi, Cleaning technology in semiconductor device manufacturing IX, in: J. Ruzyllo, T. Hattori, R.E. Novak, ECSTransactions, vol. 1, 2005, pp. 11.
    • (2005) ECSTransactions , vol.1 , pp. 11
    • Takahashi, M.1    Liu, Y.-L.2    Narita, H.3    Kobayashi, H.4
  • 28
    • 0345628931 scopus 로고
    • Strengths of Chemical Bonds
    • D.R. Lide H.P.R. Frederikse 75th ed. CRC Press Boca Raton
    • J.A. Kerr Strengths of Chemical Bonds D.R. Lide H.P.R. Frederikse CRC Handbook of Chemistry and Physics 75th ed. 1994 CRC Press Boca Raton 9 51
    • (1994) CRC Handbook of Chemistry and Physics , pp. 9-51
    • Kerr, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.