Reduction of surface roughening due to copper contamination prior to ultra-thin gate oxidation

Applied Surface Science

Volumn 181, Issue 1-2, 2001, Pages 28-34

  Peterson, Charles A ^a   Vermeire, Bert ^b   Sarid, Dror ^a   Parks, Harold G ^b  

^a UNIVERSITY OF ARIZONA   (United States)

^b University of Arizona   (United States)

Author keywords

Atomic force microscopy; Electrochemical methods; Etching; Silicon; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTAMINATION; COPPER; DIELECTRIC MATERIALS; ELECTROCHEMISTRY; ETCHING; OXIDATION; SILICON WAFERS; SPECTRUM ANALYSIS;

SPECTRAL DENSITY ANALYSIS;

SURFACE ROUGHNESS;

EID: 0035801796     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00342-7     Document Type: Article

References (16)

1. The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them
2. Influence of thermal treatments on the distribution of contaminating copper near the surface of silicon: A comparative SIMS and XPS study
3. GOI impact of Cu, Ni, and Al atoms on the wafer surface prior to TRP and furnace oxidations
4. The effect of copper contamination on field overlap edges and perimeter junction leakage current
5. The effect of copper contamination from HF and APM on the integrity of 3 nm gate oxides
6. Quantifying the impact of homogenous metal contamination using test structure metrology and device modeling
7. Mechanism of metallic particle growth and metal-induced pitting on Si wafer surface in wet chemical processing
8. Electrochemical coupling effects on the corrosion of silicon samples in HF solutions
9. Impact of the electrochemical properties of silicon wafer surface on copper outplating from HF solutions
10. Copper deposition on HF etched silicon surfaces: Morphological and kinetic studies
11. Electrochemical and radiochemical study of copper contamination mechanism from HF solution onto silicon substrates
12. A comparative electrochemical study of copper deposition onto silicon from dilute and buffered hydrofluoric acids
13. Electrochemical and radiochemical study of copper contamination mechanism from HF solutions onto silicon substrates
14. Protection of HF baths against noble metal contamination
15. Optimized HF solutions in ULSI technology