Improved copper detection in hydrofluoric acid by recombination lifetime measurements on dedicated silicon substrates

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 527-529

  Boehringer, Matthias ^a   Hauber, Johann ^a  

^a ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION RATES; CU ADSORPTION; DILUTED HYDROFLUORIC ACIDS; DOPED SILICON; LIMIT OF DETECTION; MINORITY CARRIER LIFETIMES; MONITOR WAFERS; ORDERS OF MAGNITUDE; PHOSPHORUS-DOPED; RECOMBINATION LIFETIME; SILICON SUBSTRATES; SILICON SURFACES; SUBSTRATE DOPING; THREE ORDERS OF MAGNITUDE;

ADSORPTION; CARRIER LIFETIME; COPPER; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON WAFERS; SUBSTRATES;

HYDROFLUORIC ACID;

EID: 79956052272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436272     Document Type: Article

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