Masking effect of copper during anisotropic etching of silicon in buffered hydrofluoric acid solutions

Journal of Applied Physics

Volumn 85, Issue 3, 1999, Pages 1857-1863

  Li, Guangming ^a,b   Jiao, Jun ^b   Seraphin, Supapan ^b   Raghavan, Srini ^b   Jeon, Joong S ^c  

^a Rockwell Semiconductor Systems   (United States)

^b University of Arizona   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010224397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369310     Document Type: Article

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