Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature

Journal of Crystal Growth

Volumn 289, Issue 1, 2006, Pages 107-112

  Oh, Min Suk ^a   Kwon, Min Ki ^a   Park, Il Kyu ^a   Baek, Sung Ho ^a   Park, Seong Ju ^a   Lee, S H ^b   Jung, J J ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

Author keywords

A1. Diffusion; A3. Chemical vapor deposition; B1. GaN; B3. Light emitting diodes

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIFFUSION; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; GALLIUM NITRIDE; PYROLYSIS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; X RAY DIFFRACTION;

ELECTROLUMINESCENCE (EL) SPECTRUM; GAN; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTER-DIFFUSION;

LIGHT EMITTING DIODES;

EID: 33244493085     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.129     Document Type: Article

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