Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 A, 2001, Pages

  Ishikawa, Hiroyasu ^a   Nakada, Naoyuki ^a   Mori, Masayoshi ^a   Zhao, Guan Yuan ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b CHUBU UNIVERSITY   (Japan)

Author keywords

Decomposition; GaInN; GaN; Light emitting diode; Multi quantum well

Indexed keywords

DECOMPOSITION; DOPING (ADDITIVES); HYDROGEN; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

MULTI QUANTUM WELL; PHOTOLUMINESCENCE ANALYSIS; QUANTUM BARRIER LAYER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035517507     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1170     Document Type: Letter

References (13)