Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 397-400

  Tran, C A ^a   Karlicek Jr , R F ^a   Schurman, M ^a   Osinsky, A ^a   Merai, V ^a   Li, Y ^a   Eliashevich, I ^a   Brown, M G ^a   Nering, J ^a   Ferguson, I ^a   Stall, R ^a  

^a EMCORE CORPORATION   (United States)

Author keywords

High brightness blue LED; InGaN multiple quantum wells; Phase separation

Indexed keywords

CRYSTAL GROWTH; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

HIGH BRIGHTNESS BLUE LIGHT EMITTING DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477229     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00572-7     Document Type: Article

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