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Volumn 42, Issue 4 B, 2003, Pages 2281-2283

High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

Author keywords

EL; High indium content; InGaN GaN; LED; PL

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0038347877     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2281     Document Type: Article
Times cited : (21)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.