Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1821-1826

  Wang, Ching Wu ^a  

^a I SHOU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MAGNETRON SPUTTERING; MICROELECTRONIC PROCESSING; NATURAL FREQUENCIES; NEUTRON IRRADIATION; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTRUM ANALYSIS; THIN FILMS;

GALLIUM NITRIDE SCHOTTKY DIODES; GALLIUM NITRIDE THIN FILMS; GOLD SCHOTTKY DIODES; MICROSTRUCTURAL PROPERTIES; NITROGEN RELATED DEEP ELECTRON TRAPS; RADIOFREQUENCY MAGNETRON SPUTTERED THIN FILMS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0036026349     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1498275     Document Type: Article

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