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Volumn 51, Issue 5 III, 2004, Pages 2729-2735

Proton energy dependence of the light output in gallium nitride light-emitting diodes

Author keywords

Blue LEDs; Energy dependence; Gallium nitride; Light emission degradation; Non ionizing energy loss (NIEL); Optoelectronics; Proton; Quantum well light emitting diodes; Radiation damage

Indexed keywords

IONIZATION; IRRADIATION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; PROTONS; RADIATION DAMAGE; THERMAL EFFECTS;

EID: 8344234330     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835097     Document Type: Article
Times cited : (37)

References (14)
  • 1
    • 0034451095 scopus 로고    scopus 로고
    • 2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements
    • S. M. Khanna, J. Webb, H. Tang, A. J. Houdayer, and C. Carlone, "2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements," IEEE Trans. Nucl. Sci., vol. 47, pp. 2322-2328, 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2322-2328
    • Khanna, S.M.1    Webb, J.2    Tang, H.3    Houdayer, A.J.4    Carlone, C.5
  • 2
    • 0036945003 scopus 로고    scopus 로고
    • Transport properties of proton irradiated gallium nitride based two-dimensional electron gas system
    • F. Gaudreau, P. Fournier, C. Carlone, S. M. Khanna, H. Tang, J. Webb, and A. Houdayer, "Transport properties of proton irradiated gallium nitride based two-dimensional electron gas system," IEEE Trans. Nucl. Sci., vol. 49, pp. 2702-2707, 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 2702-2707
    • Gaudreau, F.1    Fournier, P.2    Carlone, C.3    Khanna, S.M.4    Tang, H.5    Webb, J.6    Houdayer, A.7
  • 3
    • 0035721726 scopus 로고    scopus 로고
    • Spectral properties of proton irradiated gallium nitride blue diodes
    • F. Gaudreau, C. Carlone, A. Houdayer, and S. M. Khanna, "Spectral properties of proton irradiated gallium nitride blue diodes," IEEE Trans. Nucl. Sci., vol. 48, pp. 1778-1784, 2001.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , pp. 1778-1784
    • Gaudreau, F.1    Carlone, C.2    Houdayer, A.3    Khanna, S.M.4
  • 5
    • 0012612576 scopus 로고
    • Threshold energy in GaAs determined by electrical and optical investigations
    • B. Lehmann, M. A. Brière, D. Brauning, and A. L. Barry, "Threshold energy in GaAs determined by electrical and optical investigations," in ESA SP-313, 1991, pp. 287-292.
    • (1991) ESA SP-313 , pp. 287-292
    • Lehmann, B.1    Brière, M.A.2    Brauning, D.3    Barry, A.L.4
  • 7
    • 0034450453 scopus 로고    scopus 로고
    • 1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes
    • S. M. Khanna, D. Estan, H. C. Liu, M. Gao, M. Buchanan, and A. J. SpringThorpe, "1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes," IEEE Trans. Nucl. Sci., vol. 47, pp. 2508-2514, 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2508-2514
    • Khanna, S.M.1    Estan, D.2    Liu, H.C.3    Gao, M.4    Buchanan, M.5    Springthorpe, A.J.6
  • 8
    • 0027844647 scopus 로고
    • Damage correlations in semiconductors exposed to gamma, electron, and proton radiations
    • G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron, and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1372-1379
    • Summers, G.P.1    Burke, E.A.2    Shapiro, P.3    Messenger, S.R.4    Walters, R.J.5
  • 11
    • 0020102290 scopus 로고
    • Proton damage effects on light emitting diodes
    • B. H. Rose and C. E. Barnes, "Proton damage effects on light emitting diodes," J. Appl. Phys., vol. 53, pp. 1772-1780, 1982.
    • (1982) J. Appl. Phys. , vol.53 , pp. 1772-1780
    • Rose, B.H.1    Barnes, C.E.2
  • 13
    • 0036952590 scopus 로고    scopus 로고
    • Application of displacement damage dose analysis to low-energy protons on silicon devices
    • S. R. Messenger, E. A. Burke, G. P. Summers, and R. J. Walters, "Application of displacement damage dose analysis to low-energy protons on silicon devices," IEEE Trans. Nucl. Sci., vol. 49, pp. 2690-2694, 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 2690-2694
    • Messenger, S.R.1    Burke, E.A.2    Summers, G.P.3    Walters, R.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.