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Volumn 19, Issue 5, 2001, Pages 2307-2311

Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800°C on Si (100) by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEPOSITION; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

EID: 0035442689     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1384559     Document Type: Article
Times cited : (8)

References (38)
  • 13
    • 0003240183 scopus 로고    scopus 로고
    • McAllister Technical Services, Coere d'Alene Idaho 83815
    • (1998)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.