|
Volumn 19, Issue 5, 2001, Pages 2307-2311
|
Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800°C on Si (100) by molecular beam epitaxy
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DEFECTS;
DEPOSITION;
ELECTRON TRANSITIONS;
MOLECULAR BEAM EPITAXY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR GROWTH;
THERMAL EFFECTS;
ATOMIC SCALE MORPHOLOGY;
HOMOEPITAXY;
SEMICONDUCTING SILICON;
|
EID: 0035442689
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1384559 Document Type: Article |
Times cited : (8)
|
References (38)
|