Comparison of charge yield in MOS devices for different radiation sources

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2656-2661

  Paillet, P ^a   Schwank, J R ^b   Shaneyfelt, M R ^b   Ferlet Cavrois, V ^a   Jones, R L ^b   Flament, O ^a   Blackmore, E W ^c  

^a CEA DIF   (France)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c TRIUMF   (Canada)

Author keywords

Charge yield; Initial recombination; Ionizing radiation; Metal oxide semiconductor; MOS; Total dose; Transistors.

Indexed keywords

ELECTRON IRRADIATION; GAMMA RAYS; MOSFET DEVICES; PROTON IRRADIATION; X RAY ANALYSIS;

CHARGE YIELDS;

MOS DEVICES;

EID: 0036952439     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805438     Document Type: Conference Paper

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