Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Masahara, Meishoku ^a   Liu, Yongxun ^a   Endo, Kazuhiko ^a   Matsukawa, Takashi ^a   Sakamoto, Kunihiro ^a   Ishii, Kenichi ^a   O'uchi, Shinichi ^a   Sugimata, Etsuro ^a   Yamauchi, Hiromi ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ORIENTATION-DEPENDENT WET ETCHING; SELF-ALIGNED SOURCES; SOLID-PHASE DIFFUSION; STANDING-UP ULTRATHIN CHANNEL;

DIFFUSION; ETCHING; ION IMPLANTATION; IONS; SEMICONDUCTING SILICON; SUBSTRATES;

MOSFET DEVICES;

EID: 32944477701     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173715     Document Type: Article

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