Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 232-236

  Zhu, Shiyang ^a,c   Singh, J ^b   Zhu, Chunxiang ^a   Du, A ^b   Li, M F ^a,b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c FUDAN UNIVERSITY   (China)

Author keywords

Low temperature process; Schottky barrier source drain; Silicide; TFT

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRODES; FABRICATION; GATES (TRANSISTOR); LOW TEMPERATURE EFFECTS; POLYSILICON; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS;

GATE DIELECTRICS; LOW TEMPERATURE PROCESS; METAL GATE; SILICIDE;

THIN FILM TRANSISTORS;

EID: 32344441419     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.001     Document Type: Article

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