Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 2, 1999, Pages 885-909

  Wang, Y Z ^a,b   Awadelkarim, O O ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Anadigics Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DIELECTRIC DEVICES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

GLASS SUBSTRATE COATINGS; SOLID-PHASE CRYSTALLIZATION;

SEMICONDUCTING SILICON;

EID: 0033335232     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199912)176:2<885::AID-PSSA885>3.0.CO;2-L     Document Type: Article

References (28)

1. J. S. IM and R. S. SPOSILI, Mater. Res. Soc. 21 (3), 39 (1996).
2. K. C. SARASWAT, V. SUBRAMANIAN, and S. JURICHICH, Mater. Res. Soc. Symp. Proc. 472, 439 (1997).
3. H. OHSHIMA, Int. Display Conf. 26 (1994).
4. Y. Z. WANG, R. KINGI, O. O. AWADELKARIM, and S. J. FONASH, MRS Symp. Proc. 403, 373 (1996).
5. R. H. KAKKAD, Ph.D. Thesis, The Pennsylvania State University, 1992.
6. T. KRETZ, R. STROH, P. LEGANEUX, O. HUET, M. MAGIS, and D. PRISAT, Solid State Phenom. 37/38, 311 (1994).
7. L. CSEPREGI, E. F. KENNEDY, T. G. GALLAGHER, and J. W. MAYER, J. Appl. Phys. 48, 4234 (1977).
8. E. F. KENNEDY, L. CSEPREGI, and J. W. MAYER, J. Appl. Phys. 48, 4241 (1977).
9. H. SHIRAI, B. DREVILLON, and R. OSSIKOVSKI, Appl. Phys. Lett. 62, 2833 (1993).
10. J. Y. W. SETO, J. Appl. Phys. 46, 5247 (1975).
11. G. BACCARANI, B. Ricco, and G. SPADINI, J. Appl. Phys. 49, 5565 (1978).
12. T. KAMINS, in: Polycrystalline Silicon for IC Applications, Kluwer Academic Publ., Dordrecht, p. 159.
13. Y. Z. WANG, O. O. AWADELKARIM, J. G. GOUILLARD, and D. G. AST, Semicond. Sci. Technol. 13, 532 (1998).
14. A. W. DE GROOT, G. C. McGONIGAL, D. J. THOMSON, and H. C. CARD, J. Appl. Phys. 55, 312 (1984).
15. Y. Z. Wang and O. O. AWADELKARIM, Microelectronics and Reliability 38, 1835 (1998).
16. A. G. LEWIS, I.-W. Wu, T.-Y. HUANG, M. KOYANAGI, A. CHIANG, and R. H. BRUCE, IEDM Tech. Dig., 260 (1988).
17. R. A. MARTIN, M. HACK, J. G. SHAW, and M. SHURR, IEDM Tech. Dig., 361 (1989).
18. G. Liu and S. J. FONASH, Appl. Phys. Lett. 62, 2554 (1993).
19. C. HAYZELDIN and J. L. BATSTONE, J. Appl. Phys. 73, 8279 (1993).
20. G. LIU and S. J. FONASH, Appl. Phys. Lett. 55, 660 (1989).
21. T. HEMPEL, O. SCHOENFELD, and F. SYROWATKA, Solid State Communications 85, 921 (1993).
22. O. SCHOENFELD, T. HEMPEL, X. ZHAO, and Y. AOYAGI, Thin Solid Films 261, 236 (1995).
23. D. M. Scott and M. NICOLET, phys. stat. sol. (a) 66, 733 (1981).
24. R. J. NEMANICH, C. C. TSAI, M. J. THOMPSON, and T. W. SIGMON, J. Vac. Sci. Technol. 19, 685 (1981).
25. S.-W. LEE, Y.-C. JEON, and S.-K. Joo, Appl. Phys. Lett. 66, 1671 (1995).
26. A. Y. KUZNETSOV and B. G. SVENSSON, Appl. Phys. Lett. 66, 2229 (1995).
27. S. COFFA, J. M. POATE, D. C. JACOBSON, W. FRANK, and W. GUSTIN, phys. Rev. B 45, 8355 (1992).
28. Y. Z. WANG and O. O. AWADELKARIM, J. Vac. Sci. Technol. A 16, 3352 (1998).