Low-temperature-processed polycrystalline silicon thin-film transistors using titanium disilicide contacts for source and drain

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 5 A, 1996, Pages

  Chang, Sung Keun ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; HYDROGENATION; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TITANIUM COMPOUNDS;

FIELD EFFECT MOBILITY; HELICON PLASMA HYDROGENATION; IN SITU SILICIDATION; STAGGERED STRUCTURE; TITANIUM DISILICIDE;

THIN FILM TRANSISTORS;

EID: 0030148980     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l538     Document Type: Article

References (8)