Rectifying characteristics of sputter-deposited SiGe diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1301-1305

  Ru, Guo Ping ^a   Wang, Guang Wei ^a   Jiang, Yu Long ^a   Huang, Wei ^a   Qu, Xin Ping ^a   Zhu, Shi Yang ^a   Li, Bing Zong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR JUNCTIONS; SOLID STATE RECTIFIERS; SPUTTER DEPOSITION;

SCHOTTKY BARRIER HEIGHTS (SBH);

SEMICONDUCTOR DIODES;

EID: 0141569903     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1580842     Document Type: Conference Paper

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