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Chinese Physics Letters

Volumn 22, Issue 8, 2005, Pages 2020-2022

High performance P-channel schottky barrier MOSFETs with self-aligned PtSi source/drain on thin film SOI substrate

(2) Zhu, Shi Yang a,b Li, Ming Fu b

a FUDAN UNIVERSITY (China)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GATE DIELECTRICS; HIGH-K DIELECTRIC; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; PLATINUM COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; SUBSTRATES; TEMPERATURE;

DIELECTRIC GATES; GATE METALS; HIGH-K GATE DIELECTRICS; P CHANNELS; PERFORMANCE; SCHOTTKY BARRIERS; SELF-ALIGNED; SILICON-ON-INSULATOR SUBSTRATES; SOURCE-DRAIN; THIN FILM SILICON;

SILICON ON INSULATOR TECHNOLOGY;

EID: 23844513908 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/22/8/055 Document Type: Article

Times cited : (5)

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