CHF3-O2 reactive ion etching of 4H-SiC and the role of oxygen

Microelectronic Engineering

Volumn 83, Issue 2, 2006, Pages 381-386

  Xia, J H ^a   Rusli, ^a   Choy, S F ^b   Gopalakrishan, R ^b   Tin, C C ^c   Yoon, S F ^a   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c AUBURN UNIVERSITY   (United States)

Author keywords

Auger electron spectroscopy; Oxygen; Reactive ion etching; Silicon carbide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SURFACE ROUGHNESS;

CARBON RESIDUE; ETCH RATE; FLOW RATE; GAS FLOW;

SILICON CARBIDE;

EID: 32144461567     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.008     Document Type: Article

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