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Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 202-206

Comparison of F2 plasma chemistries for deep etching of SiC

(5) Leerungnawarat, P a,c Lee, K P a Pearton, S J a Ren, F a Chu, S N G b

a University of Florida (United States)

b LUCENT TECHNOLOGIES (United States)

c NOKIA RESEARCH CENTER (United States)

Author keywords

F2 based plasma chemistries; High rate etching; SiC

Indexed keywords

ELECTRIC PROPERTIES; ETCHING; FLUORINE; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES;

FLUORINE BASED PLASMA CHEMISTRY; HIGH RATE ETCHING;

SILICON CARBIDE;

EID: 0035275416 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0016-0 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.