Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 219-224

  Lanois, Frédéric ^a   Planson, Dominique ^a   Locatelli, Marie Laure ^a   Lassagne, Patrick ^b   Jaussaud, Claude ^b   Chante, Jean Pierre ^a  

^a Univ Claude Bernard Lyon1   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; OXYGEN; PLASMA ETCHING; SATURATION (MATERIALS COMPOSITION); SILICON CARBIDE;

DISTRIBUTED ELECTRON CYCLOTRON RESONANCE (DECR) REACTOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032637961     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0017-y     Document Type: Article

References (21)

1. W.-S. Pan and A.J. Steckl, Amorphous and Crystalline Silicon Carbide and Related Materials II Springer Proc. in Physics, Vol. 43, (Berlin: Springer-Verlag, 1989), p. 217.
2. P.H. Yih and A.J. Steckl, J. Electrochem. Soc. 140, 1813 (1993).
3. S. Terakado et al., J. Vac. Sci. Technol. A 12, 379 (1994).
4. B.P. Luther, J. Ruzillo and D.L. Miller, Appl. Phys. Lett. 63, 171 (1990).
5. DAIMLER-BENZ AKTIENGESELLSCHAFT, RFA. DE 43 10 345 A 1. 1993-03-31. Patent.
6. J. Wu, J.D. Parsons and D.R. Evans, J. Electrochem. Soc. 142, 669 (1995).
7. D. Planson, Thèse Doct. Institut National des Sciences Appliquées de Lyon, (1994).
8. J.R. Flemish and K. Xie, J. Electrochem. Soc. 143, 2620 (1996).
9. F. Lanois, P. Lassagne, D. Planson and M.L. Locatelli, Appl. Phys. Lett. 69, 236 (1996).
10. S. Dohmae, K. Shibahara, S. Nishino and H. Matsunami, Jpn. J. Appl. Phys 24, L873 (1985).
11. J. Sugiura, W.-J. Lu, K C. Cadien and A.J. Steckl, J. Vac. Sci. Technol. 4, 349 (1996).
12. J.W. Palmour, R.F. Davis, T.M. Wallett and K.B. Bhasin, J. Vac. Sci. Technol. A 4, 590 (1986).
13. G. Kelner, S.C. Binari and P.H. Klein, J. Electrochem. Soc. 134, 253 (1987).
14. R. Padiyath, R.L. Wright, M.I. Chaudry and S.V. Babu, Appl. Phys. Lett. 58, 1053 (1991).
15. A.J. Steckl and P.H. Yih, Amorphous and Crystalline Silicon Carbide and Related Materials IV, Springer Proc. in Physics, Vol. 71, (Berlin: Springer-Verlag, 1992), p. 423.
16. J. Wu, J.D. Parsons and D.R. Evans, J. Electrochem Soc. 141, 2915 (1994).
17. V. Saxena and A.J. Steckl, ICSCIII-N'97, Part 2, (1998), p. 829.
18. J.R. Flemish, K. Xie and J.H. Zhao, J. Appl. Phys. 64, 2315 (1994).
19. J. Flemish et al., Proc. Mater. Res. Soc. Symp, vol. 339, (Pittsburgh, PA: Mater. Res. Soc., 1994), p. 145.
20. F. Bousnari, M. Moisan, L. St-Onge, J. Margot, J. Pelletier, M.A. El Khakani and E. Gat, J. Appl. Phys. 77, 4030 (1995).
21. L. Cao, B. Li and J.H. Zhao, Proc. ICSCIII-N'9 7, Part 2, (1998), p. 833.