Photoluminescence of Mg-doped GaN with different Mg concentrations after annealing at different temperatures

Chinese Physics Letters

Volumn 20, Issue 7, 2003, Pages 1137-1140

  Zhou, Xiao Ying ^a   Sun, Chang Zheng ^a   Guo, Wen Ping ^a   Hu, Hui ^a   Luo, Yi ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; MAGNESIUM; PHOTOLUMINESCENCE; TEMPERATURE;

ANNEALING TEMPERATURES; AS-GROWN; COMPENSATION EFFECTS; GAN FILM; LOW TEMPERATURE PHOTOLUMINESCENCE; LOWER ENERGIES; MG CONCENTRATIONS; MG-DOPING; MODEL-BASED OPC; PEAK ENERGY;

ANNEALING;

EID: 30244530027     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/7/348     Document Type: Article

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