Effects of surface treatment on the electrical properties of Ohmic contacts to (In)GaN for high performance optical devices

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 576-582

  Jang, J S ^a   Park, S J ^a   Seong, T Y ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FERMI LEVEL; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL DEVICES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE TREATMENT; THERMODYNAMIC PROPERTIES;

INDIUM GALLIUM NITRIDE; VALENCE BAND;

OHMIC CONTACTS;

EID: 0036962607     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<576::AID-PSSA576>3.0.CO;2-W     Document Type: Article

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