Excess carrier lifetime measurement of bulk SiC wafers and its relationship with structural defect distribution

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 12, 2005, Pages 8333-8339

  Mori, Tatsuhiro ^a   Kato, Masashi ^a   Watanabe, Hideki ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a   Sumie, Shingo ^b   Hashizume, Hidehisa ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b KOBELCO RESEARCH INSTITUTE INC   (Japan)

Author keywords

Birefringence; Bulk SiC wafer; Carrier lifetime mapping; Net donor concentration; Structural defect; Surface recombination; X ray topograph

Indexed keywords

BIREFRINGENCE; CHARGE CARRIERS; DEFECTS; SILICON WAFERS;

BULK SIC WAFER; CARRIER LIFETIME MAPPING; STRUCTURAL DEFECT; SURFACE RECOMBINATION;

SILICON CARBIDE;

EID: 31644434554     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.8333     Document Type: Article

References (20)

1. J. P. Bergman, O. Kordina and E. Janzen: Phys. Status Solidi A 162 (1997) 65.
2. J. Zhang, L. Storasta, J. P. Bergman, N. T. Son and E. Janzén: J. Appl. Phys. 93 (2003) 4708.
3. T. Tawara, H. Tsuchida, S. Izumi, I. Kamata and K. Izumi: Mater. Sci. Forum 457-460 (2004) 565.
4. K. Danno, K. Hashimoto, H. Saitoh, T. Kimoto and H. Matsunami: Jpn. J. Appl. Phys. 43 (2004) L969.
5. E. Janzen, A. Henry, J. P. Bergman, A. Ellison and B. Magnusson: Mater. Sci. Semicond. Process. 4 (2001) 181.
6. J. M. Bluet, L. Masarotto, I. El Harrouni and G. Guillot: Mater. Sci. Eng. B 102 (2003) 277.
7. A. Galeckas, J. Linnros, M. Frischholz, K. Rottner, N. Nordell, S. Karlsson and V. Grivickas: Mater. Sci. Eng. B 61-62 (1999) 239.
8. A. Galeckas, J. Linnros, M. Frischholz and V. Grivickas: Appl. Phys. Lett. 79 (2001) 365.
9. M. Kato, M. Ichimura, E. Arai, S. Sumie and H. Hashizume: Mater. Sci. Forum 457-460 (2004) 505.
10. S. G. Sridhara, T. J. Eperjesi, R. P. Dvaty and W. J. Choyke: Mater. Sci. Eng. B 61-62 (1999) 229.
11. S. Sumie, F. Ojima, K. Yamashita, K. Iba and H. Hahizume: J. Electrochem. Soc. 152 (2005) 99.
12. N. Neimontas, R. Aleksiejunas, M. Sudžius, K. Jarašiunas and J. P. Bergman: Mater. Sci. Forum 483-485 (2005) 413.
13. M. Ichimura, H. Tajiri, Y. Morita, N. Yamada and A. Usami: Appl. Phys. Lett. 70 (1997) 1745.
14. M. Ichimura, N. Yamada, H. Tajiri and E. Arai: J. Appl. Phys. 84 (1998) 2727.
15. M. Tajima, E. Higashi, T. Hayashi, H. Kinoshita and H. Shiomi: Appl. Phys. Lett. 86 (2005) 061914.
16. T. L. Straubinger, M. Bickermann, M. Rasp, R. Weingartner, P. J. Wellmann and A. Winnacker: Mater. Sci. Forum 389-393 (2002) 131.
17. P. J. Wellmann and R. Weingartner: Mater. Sci. Eng. B 102 (2003) 262.
18. M. Gong, S. Fung, C. D. Beling and Z. You: J. Appl. Phys. 85 (1999) 7604.
19. A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Widner, G. Pensl, P. Seperr and H. Itoh: J. Appl. Phys. 90 (2001) 3377.
20. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schoner and N. Nordell: Phys. Status Solidi A 162 (1997) 199.