Excess carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method

Applied Physics Letters

Volumn 70, Issue 13, 1997, Pages 1745-1747

  Ichimura, M ^a   Tajiri, H ^a   Morita, Y ^a   Yamada, I M ^a   Usami, A ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRON SCATTERING; GAS LASERS; MICROWAVES; PHOTOCONDUCTIVITY;

CARRIER LIFETIME; CARRIER RECOMBINATION; CARRIER TRAPS; DECAY CURVES; ELECTRON CAPTURE; MICROWAVE PHOTOCONDUCTIVITY DECAY METHOD; NITROGEN LASERS;

SILICON CARBIDE;

EID: 0031099697     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118643     Document Type: Article

References (7)

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