Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 413-416

  Neimontas, K ^a   Aleksiejunas, R ^a   Sudzius M ^a   Jarasiunas K ^a   Bergman, J P ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

4h sic; Carrier diffusion and recombination; Four wave mixing

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION; EPITAXIAL LAYERS; PHOTOEXCITATION;

CARRIER DIFFUSION AND RECOMBINATION; FOUR-WAVE MIXING;

SILICON CARBIDE;

EID: 31644443677     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.413     Document Type: Conference Paper

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7. We note, that non-equilibrium carrier concentrations given in Fig. 3 and Fig. 4 at 266 nm excitation correspond to initial carrier densities (Δ = 0) at a very surface of the excited sample.