UV scanning photoluminescence spectroscopy applied to silicon carbide characterisation

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 277-283

  Bluet, J M ^a   Masarotto, L ^a   El Harrouni, I ^a   Guillot, G ^a  

^a Lab de Phys de la Matière   (France)

Author keywords

Dislocation; Micropipes; Minority carrier lifetime; Scanning photoluminescence; Silicon carbide; Triangular defects

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; PHOTOLUMINESCENCE; SCANNING; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

MICROPIPES;

SILICON CARBIDE;

EID: 0041930976     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00717-1     Document Type: Conference Paper

References (21)

1. Tsvetkov V.F., Allen S.T., Kong H.S., Carter C.H. Jr. Inst. Phys. Conf. Ser. 142:1995;17.
2. Milita S., Madar R., Baruchel J., Anikin M., Argunova T. Mater. Sci. Eng. B. 61-62:1999;63.
3. Galeckas A., Linnros J., Breitholtz B., Bleichner H. J. Appl. Phys. 90:2001;980.
4. Sridhara S.G., Clemen L.L., Devaty R.P., Choyke W.J. J. Appl. Phys. 83:1999;7909.
5. MacMillan M.F., Hultman L., Hallin C., Ivanov I.G., Henry A., Janzen E., Galloway S.A. Mater. Sci. Forum. 264-268:1998;653.
6. Pernot E., Mermoux M., Kreisel J., Chaix-Pluchery O., Pernot-Rejmankova P., Anikin M., Pelissier B., Glazer A.M., Madar R. Mater. Sci. Forum. 353-356:2000;283.
7. Krawczyk S.K. Bloord D. Encyclopaedia of Advanced Materials. 4S-Z:1994;2318-2336 Pergamon Press, Oxford.
8. Konstantinov A.O., Wahab Q., Hallin C., Harris C.I., Péck B. Mater. Sci. Forum. 264-268:1998;1025.
9. Hallin C., Konstantinov A.O., Kordina O., Janzen E. Inst. Phys. Conf. Ser. 142:1995;85.
10. Bergman J.P., Lendemann H., Nilsson P.Å., Lindefelt U., Skytt P. Mater. Sci. Forum. 353-356:2001;299.
11. Sridhara S.G., Carlsson F.H.C., Bergman J.P., Janzen E. Appl. Phys. Lett. 79:2001;3944.
12. Bai S., Wagner G., Shishkin E., Choyke W.J., Devaty R.P., Zhang M., Pirouz P., Kimoto T. Mater. Sci. Forum. 389-393:2002;589.
13. Liu J.Q., Skowronski M., Hallin C., Söderholm R., Lendemann H. Appl. Phys. Lett. 80:2002;749.
14. Liu J.Q., Chung H.J., Kuhr T., Li Q., Skowronski M. Appl. Phys. Lett. 80:2002;2111.
15. Miao M.S., Limpijumnong S., Lambrecht W.R.L. Appl. Phys. Lett. 79:2001;4360.
16. Iwata H., Lindefelt U., Oberg S., Briddon P.R. Mater. Sci. Forum. 389-393:2002;529.
17. Galeckas A., Linnros J., Grivickas V., Lindelfelt U., Hallin C. Appl. Phys. Lett. 71:1997;3269.
18. Galeckas A., Linnros J., Grivickas V., Lindelfelt U., Hallin C. Mater. Sci. Forum. 264-268:1998;533.
19. Srhidara S.G., Eperjesi T.J., Devaty R.P., Choyke W.J. Mater. Sci. Forum. 338-342:2000;551-557.
20. Galeckas A., Linnros J., Frischholz M., Grivickas V. Appl. Phys. Lett. 79:2001;365-367.
21. Sghaier N., Souifi A.K., Bluet Et J.M., Guillot G. J. Mater. Sci.: Mater. Electron. 12:2001;273.