Effect of drain-to-source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics

Electronics Letters

Volumn 39, Issue 11, 2003, Pages 876-877

  Vertiatchikh, A V ^a   Eastman, L F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SHORT CIRCUIT CURRENTS;

DRAIN-TO-SOURCE SPACING;

TRANSISTORS;

EID: 0038339639     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030573     Document Type: Article

References (4)

1. EASTMAN, L.F., TILAK, V., SMART, J., GREEN, B., CHUMBES, E., DIMITROX R., KIM, H., AMBACHER, O., WEINMANN, N., PRUNTY, T., MURPHY, M., SCHAFF, W., and SHEALY, J.: 'Undoped AlGaN/GaN HEMTS for microwave power amplification', IEEE Trans. Electron Devices, 2001, 48, (3)
2. KUMAR, V., LU, W., SCHWINDT, R., KULIEV, A., SIMIN, G., YANG, J., KHAN, M., and ADESIDA, I.: 'AlGaN/GaN HEMTs on SiC with Ft of over 120 GHz', IEEE Electron Device Lett., 2002, 23, (8)
3. SHEALY, J., KAPER, V., TILAK, V., PRUNTY, T., SMART, J., GREEN, B., and EASTMAN, L.: 'An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer', J. Phys., Condens. Matter., 2002, 14, pp. 3499-3509
4. DAMBRINE, G., CAPPY, A., HELIODORE, F., and PLAYEZ, E.: 'A new method for determining the FET small-signal equivalent circuit', IEEE Trans. Microw. Theory Tech., 1988, 36, (7)