Detection and characterization of stress-induced defects in gate SiO 2 films by conductive atomic force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 B, 2004, Pages 4679-4682

  Watanabe, Yukihiko ^a,b   Seko, Akiyoshi ^b   Kondo, Hiroki ^b   Sakai, Akira ^b   Zaima, Shigeaki ^b   Yasuda, Yukio ^b  

^a Rd Management Section   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Conductive atomic force microscopy; Gate film; Hole; SiO2; Stress induced defect

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DEFECTS; ELECTRIC POTENTIAL; MOS DEVICES; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; STRESSES; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; THICKNESS MEASUREMENT;

ELECTRON INJECTION; PYROGENIC OXIDATION; THINNING PROCESS;

THIN FILMS;

EID: 5144229055     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4679     Document Type: Conference Paper

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